供应贴片三*管 S8550D(图)

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MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous -800 mA
TJ, Tstg Junction and Storage Temperature -55-150 ℃

*These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
ELE*RICAL CHARA*ERISTICS(Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100μA, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO* IC= -0.1mA , IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE= -100μA, IC=0 -6 V
Collector cut-off current ICBO VCB= -35V , IE=0 -0.1 μA Collector cut-off current ICEO VCE= -20V , IB=0 -0.1 μA hFE(1) VCE=-1V, IC=-5mA 45 hFE(2) VCE=-1V, IC=-100mA 80 400 DC current gain hFE(3) VCE=-1V, IC=-800mA 40 Collector-emitter saturation voltage VCE(sat) IC= -800mA, IB=-80mA -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V
Transition frequency f T
VCE=-6V, IC= -20mA f=30MHz
150 MHz
* Pulse Test ：pulse width ≤ 300μs，duty cycle ≤2%。
CLASSIFICATION OF hFE(2)
Rank B C D D3
Range -400
1 2 3
TO-92
1.EMITTER 2. BASE
3. COLLE*OR