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§*大额定值(Ta=25℃)ABSOLUTE MAXIMUM RATINGS
*号 Symbol | 名 称 Characteristics | 额定值 Rating | 单位
| |
cbo | 集电*—基*电压 Colletor-Base Voltage | -40 | V | |
Vceo | 集电*—发射*电压 Colleltor-Emitter Voltage | -30 | V | |
Vebo | 发射*—基*电压 Emitter-Base Voltage | -6 | V | |
Ic | 集电*电流 Colletor Current | -3000 | mA | |
Pc | 集电*功率耗散 Colletor Dissipation | 1250 | mW | |
Tj | 结 温 Junction Temperature | 150 | ℃ | |
Tstg | 贮存温度 Storage Temperature | -55-150 | ℃ |
§电特性(Ta=25℃)ELE*RICAL CHARA*ERISTICS
*号 Symbol | 名 称 Characteristsics | 测试条件 Test Conditions | *小值 Min | 特征值 T* | *大值 Max | 单位 Unit |
Bvcbo | 集电*—基*击穿电压 Collector-Base BreakdownVoltage | Ic=-100μA, Ie=0 | -40 |
|
| V |
BVceo | 集电*—发射*击穿电压 Collector-Emitter Breakdown Voltage | Ic=-5mA, Ib=0 | -30 |
|
| V |
Bvebo | 发射*—基*击穿电压 Emitter-Base Breakdown Voltage | Ie=-100μA, Ic=0 | -6 |
|
| V |
Icbo | 集电*—基*截止电流 Collector-Base Cutoff Current | Vcb=-40v, Ie=0 |
|
| -0.1 | μA |
Iebo | 发射*截止电流 Emitter Cutoff Current | Veb=-5v, Ic=0 |
|
| -0.1 | μA |
HFE | 直流电流增益 DC Current Gain | Vce=-2v, Ic=-1A | 60 |
| 400 |
|
Vces | 集电*—发射*饱和压降 Collector-Emitter Sateration Voltage | Ic=-2000mA, Ib=-200mA |
| -0.3 | -0.5 | V |
Vbes | 基*—发射*饱和压降 Base -Emitter Sateration Voltage | Ic=-2A, Ib=-0.2A |
|
| -2.0 | V |
Ft | 特征频率 Gurrent Gain-Bandwidth Product | Vce=-5v,Ic=-5mA | 50 | 300 |
| MHz |
NEC/日本电气
B772
功率
锗
NPN型
-40(V)
-3000ma(A)
1250mw(W)
300(MHz)
平面型
TO-126
塑料封装