供应三*管 13003(图)

symbol

parameter

value

units

Vcbo 

Collector-Base Voltage

700

V

Vceo 

Collector-Emitter Voltage

400

V

Vebo

Emitter-Base Voltage

9

V

Ic

Collector Current-Continuous（DC）

4

A

Ic

Collector Current-Continuous(Pulse)

8

A

IB

Base  Current

2

A

Pc

Collector Power Dissipation

50

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)cbo

IC=1mA  IE=0

700

V

Collector-emitter breakdown voltage

V(BR)ceo

IC=10mA  IB=0

400

V

Emitter-base breakdown voltage

V(BR)ebo

IE=1mA  IC=0

9

V

Collector cut-off Current

Icbo

Vcb=700V IE=0

1

mA

Collector cut-off Current

Iceo

Vce=400V IB=0

0.1

mA

Emitter cut-off Current

Iebo

Veb=9V IC=0

1

mA

DC Current gain

hEF(1)

Vce=5V IC=1A

Vce=5V  IC=2A

10+

8

40

40

Collector-emitter saturation voltage

VCE(sat)

IC=1A  IB=0.2A

IC=4A   IB=1A

0.5

1

V

Base -emitter saturation voltage

VBE(sat)

IC=2A  IB=0.1A

1.2

V

Transition frequency

fT

Vce=10VIC=500mA f=1MHZ

4

MHZ

Fall time

tf

VCC=5V  IC=0.5A

UI9600  IC=0.5A

3.5

US

Storage time

ts

2

5

US

Rank

Range

8-15

15-18

18-20

20-23

23-25

25-28

28-30

30-40