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供应900V,9A N-CH东芝场效应管2SK3878
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV)
2SK3878
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
• Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
2SK3878,K3878
TOS
TO-3P
普通型
直插式
散装
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