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60V,3A P-CH MOS场效应管J182 2SJ182(S)TO-252 2SJ182(L) TO-251
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
封装:
参数:
2SJ182,J182
HITACHI
TO-252
无铅环保型
贴片式
盒带编带包装
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