IRFB3607PBF MOS管 晶体管75V 80A

IRFB3607PbF

IRFS3607PbF

IRFSL3607PbF

Applications

High Efficiency Synchronous Rectification in

SMPS

Uninterruptible Power Supply

High Speed Power Switching

Hard Switched and High Frequency Circuits

HEXFETS

Benefits

Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

Fully Characterized Capacitance and

Avalanche SOA

Enhanced body diode dV/dt and dI/dt

Capability

IRFB3607PbF IRFS3607PbF IRFSL3607PbF

Notes on Repetitive Avalanche Curves , Figures 14, 15:

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a temperature far in

excess of Tjmax. This is validated for every part type.

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.

4. PD (ave) = Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase

during avalanche).

6. Iav = Allowable avalanche current.

7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as

25°C in Figure 14, 15).

tav = Average time in avalanche.

D = Duty cycle in avalanche = tav ·f

ZthJC(D, tav) = Transient thermal resistance, see Figures 13)

PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC

Iav = 2T/ [1.3·BV·Zth]

EAS (AR) = PD (ave)·tav1

IRFB3607PbF

IRFS3607PbF

IRFSL3607PbF

IRFB3607PbF

IRFS3607PbF

IRFSL3607PbF