晶体管2SK3799 K3799 TO-220F 东芝原装

型号：2SK3799
厂家：TOSHIBA
描述：Toshiba Semiconductor [Silicon N-Channel MOS Type Switching Regulator Applications] 
晶体管极性:：?频道
电流, Id 连续:：8A
电压, Vds 最大:：900V
在电阻RDS（上）:：1.3ohm
电压 @ Rds测量:：10V
阈值电压, Vgs th 典型值:：4V
功耗, Pd:：50W
封装类型:：TO-220SIS
针脚数:：3
功率, Pd:：50W
功耗:：50W
封装类型:：TO-220SIS
漏极电流, Id 最大值:：8A
电压 Vgs @ Rds on 测量:：10V
电压, Vds 典型值:：900V
电压, Vgs 最高:：30V
表面安装器件:：通孔安装

Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.)

• High forward transfer admittance: |Yfs| = 7.5 S (typ.)

• Low leakage current: IDSS = 100 μA (VDS = 600 V)

• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.

Note 2: VDD = 90 V, Tch = 25°C (initial), L = 10.7 mH, IAR = 13 A, RG = 25 Ω

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.)

• High forward transfer admittance: |Yfs| = 7.5 S (typ.)

• Low leakage current: IDSS = 100 μA (VDS = 600 V)

• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

晶体管2SK3799 K3799 TO-220F 东芝原装 

晶体管2SK3799 K3799 TO-220F 东芝原装 

晶体管2SK3799 K3799 TO-220F 东芝原装