ON 分立半导体 晶体管 FQP8N90C

FQP8N90C

FQP8N90C

FQP8N90C

FQP8N90C

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supplies.

Features

• 6.3A, 900V, RDS(on) = 1.9Ω @VGS = 10 V

• Low gate charge ( typical 35 nC)

• Low Crss ( typical 12 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Symbol Parameter FQP8N90C FQPF8N90C Units

RθJC Thermal Resistance, Junction-to-Case 0.73 2.08 °C/W RθJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W