CT Micro高速光耦CT6N136(S)(T1)

CT6N136(S)(T1)

CT6N136(S)(T1)

CT6N136(S)(T1)

CT6N136(S)(T1)

Features

•••• High speed 1MBit/s

•••• High isolation voltage between input and output

(Viso=5000 Vrms )

•••• Guaranteed CTR performance from 0°C to 70°C

•••• Wide operating temperature range of -55°C to

100°C

•••• Regulatory Approvals

UL - UL1577 (E364000)

VDE - EN60747-5-5(VDE0884-5)

CQC – GB4943.1, GB8898

IEC60065, IEC60950

Applications

•••• Line receivers

•••• Telecommunication equipment

•••• High speed logic ground isolation

•••• Feedback loop in switch-mode power supplies

•••• Home appliances

Package Outline Schematic

Note: Different bending options available. See package

dimension.

Description

The 6N135, 6N136, CT4502 and CT4503 devices

each consist of an infrared emitting diode, optically

coupled to a high speed photo detector transistor. A

separate connection for the photodiode bias and

output-transistor collector increase the speed by

several orders of magnitude over conventional

phototransistor couplers by reducing the

base-collector capacitance of the input transistor.

The devices are packaged in an 8-pin DIP package

and also available in gullwing (400mil) and surface

mount lead forming.