CT Micro高速光耦CTM453(V)(T1)

CTM453(V)(T1)

CTM453(V)(T1)

CTM453(V)(T1)

CTM453(V)(T1)

Features

 High speed 1Mbit/s

 High isolation voltage between input and output

(Viso=3750 Vrms )

 Guaranteed CTR performance from 0°C to 70°C

 Wide operating temperature range of -55°C to

100°C

 Green Package

 Regulatory Approvals

 UL - UL1577 (E364000)

 VDE - EN60747-5-5(VDE0884-5)

 CQC – GB4943.1, GB8898

 IEC60065, IEC60950

Description

The CTM452 and CTM453 devices each consist of

an infrared emitting diode, optically coupled to a

high speed photo detector transistor. A separate

connection for the photodiode bias and

output-transistor collector increase the speed by

several orders of magnitude over conventional

phototransistor couplers by reducing the

base-collector capacitance of the input transistor.

The devices are packaged in a Mini-Flat package .

Applications

 Line receivers

 Telecommunication equipment

 Feedback loop in switch-mode power supplies

 Home appliances

 High speed logic ground isolation

CTM453(V)(T1)

Profile Feature Pb-Free Assembly Profile

Temperature Min. (Tsmin) 150°C

Temperature Max. (Tsmax) 200°C

Time (ts) from (Tsmin to Tsmax) 60-120 seconds

Ramp-up Rate (tL to tP) 3°C/second max.

Liquidous Temperature (TL) 217°C

Time (tL) Maintained Above (TL) 60 – 150 seconds

Peak Body Package Temperature 260°C +0°C / -5°C

Time (tP) within 5°C of 260°C 30 seconds

Ramp-down Rate (TP to TL) 6°C/second max

Time 25°C to Peak Temperature 8 minutes max.