CT Micro 达林顿晶体管 CT4N33(HZD)

CT4N33(HZD)

CT4N33(HZD)

CT4N33(HZD)

CT4N33(HZD)

Features

 High isolation 5000 VRMS

 CTR flexibility available see order information

 DC input with transistor output

 Temperature range - 55 °C to 100 °C

 Regulatory Approvals

 UL - UL1577 (E364000)

 VDE - EN60747-5-5(VDE0884-5)

 CQC – GB4943.1, GB8898

 IEC60065, IEC60950

Applications

 Switch mode power supplies

 Computer peripheral interface

 Microprocessor system interface

Description

The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1,

H11B2, H11B3, H11B255, and TIL113 series

consists of a photodarlington transistor optically

coupled to a gallium arsenide Infrared-emitting diode

in a 4-lead DIP package with bending option.

Profile Feature Pb-Free Assembly Profile

Temperature Min. (Tsmin) 150°C

Temperature Max. (Tsmax) 200°C

Time (ts) from (Tsmin to Tsmax) 60-120 seconds

Ramp-up Rate (tL to tP) 3°C/second max.

Liquidous Temperature (TL) 217°C

Time (tL) Maintained Above (TL) 60 – 150 seconds

Peak Body Package Temperature 260°C +0°C / -5°C

Time (tP) within 5°C of 260°C 30 seconds

Ramp-down Rate (TP to TL) 6°C/second max

Time 25°C to Peak Temperature 8 minutes max.