EVERLIGHT 高速光耦 EL6N139

EL6N139

EL6N139

EL6N139

EL6N139

Option Description Packing quantity

None Standard DIP-8 45 units per tube

M Wide lead bend (0.4 inch spacing) 45 units per tube

S (TA) Surface mount lead form + TA tape & reel option 1000 units per reel

S (TB) Surface mount lead form + TB tape & reel option 1000 units per reel

S1 (TA) Surface mount lead form (low profile) + TA tape & reel option 1000 units per reel

S1 (TB) Surface mount lead form (low profile) + TB tape & reel option 1000 units per reel

Features

• High current transfer ratio–2000% typical

• High isolation voltage between input

and output (Viso=5000 Vrms )

• Guaranteed performance from 0°C to 70°C

• Pb free and RoHS compliant.

• UL approved (No. 214129)

• VDE approved (No. 132249)

• SEMKO approved

• NEMKO approved

• DEMKO approved

• FIMKO approved

•CSA approved (No. 2037145)

Description

The 6N138 and 6N139 devices each consists of an infrared emitting diode, optically coupled to a high gain split

Darlington photo detector. They provide extremely high current transfer ratio between input and output, with

access to a base terminal to adjust the gain bandwidth.These devices are packaged in an 8-pin DIP package and

available in wide-lead spacing and SMD options.

Applications

• Digital logic ground isolation

• RS-232C line receiver

• Low input current line receiver

• Microprocessor bus isolation

• Current loop receiver