供应东沅 FKBA3113 P沟道场效应管MOSFET

Fet/东沅 FKBA3113 PRPAK5x6 P沟道30V快速开关MOSFET

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

● Drain- Source Breakdown Voltage: -30V
● Temperature Coefficient Reference to 25℃: -0.021V/℃
● Static Drain-Source On-Resistance
VGS=-10V , ID=-8A: 25~30mΩ
VGS=-4.5V , ID=-6A: 45~55mΩ
● Gate Threshold Voltage: -1.0~2.5V
● Temperature Coefficient: -4.2mV/℃
● Drain-Source Leakage Current
VDS=-24V , VGS=0V , TJ=25℃: 1uA
VDS=-24V , VGS=0V , TJ=55℃: 5uA
● Gate- Source Leakage Current: ±100nA
● Forward Transconductance: 15S
● Gate Resistance: 15~30Ω
● Total Gate Charge: 9.8nC
● Gate Source Charge: 2.2nC
● Gate-Drain Charge: 3.4nC
● Turn-On Delay Time: 16.4ns
● Rise Time: 20.2ns
● Turn-Off Delay Time: 55ns
● Fall Time: 10ns
● Input Capacitance: 930pF
● Output Capacitance: 148pF
● Reverse Transfer Capacitance: 115pF

FKBA3113 Diode Characteristics
● Continuous Source Current: -31A
● Pulsed Source Current: -62A
● Diode Forward Voltage: 1.2V

FKBA3113产品规格书（部分）