供应蓝箭电子 BRB80N08 N沟道MOS场效应管

BlueRocket/蓝箭电子 BRB80N08 TO-263塑封封装N沟道MOS场效应管

BRB80N08 Descriptions

N-CHANNEL MOSFET in a TO-263 Plastic Package.

Electrical Characteristics(Ta=25℃)

● Drain-Source Breakdown Voltage: 80V

● Zero Gate Voltage Drain Current
VDS=80V VGS=0V: 1.0μA
VDS=80V VGS=0V TJ=125℃:10μA
● Gate-Body Leakage Current Forward: ±0.1μA
● Gate Threshold Voltage: 2~4V
● Static Drain-Source On-Resistance: 8.5~11mΩ 
● Forward Transconductance: 58S
● Drain-Source Diode Forward Voltage: 1.3V
● Input Capacitance: 3200pF
● Output Capacitance: 330pF
● Reverse Transfer Capacitance: 260pF
● Turn-On Delay Time: 20ns
● Turn-On Rise Time: 17.8ns
● Turn-Off Delay Time: 76.8ns
● Turn-Off Fall Time: 15.7ns

BRB80N08产品规格书（部分）