供应FKBA0070 东沅100V单N沟道MOS管

Fet/东沅 FKBA0070 PRPAK5x6 N通道100V快速开关MOSFET

FKBA0070 Absolute Maximum Ratings

● Drain-Source Vltage: 100V
● Gate-Source Voltage: ±20V
● Continuous Drain Current
ID@TC=25℃: 82A
ID@TC=100℃: 52A
ID@TA=25℃: 12.8A
ID@TA=70℃: 10.3A
● Pulsed Drain Current: 250A
● Single Pulse Avalanche Energy: 186mJ
● Avalanche Current: 61A
● Total Power Dissipation:
PD@TC=25℃: 83W
PD@TA=25℃: 2W
● Storage Temperature Range: -55 to 150℃
● Operating Junction Temperature Range: -55 to 150℃

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

● Drain source breakdown voltage: 100V

● Static drain source conduction resistance
VGS=10V，ID=20A: 5.6~7mΩ
VGS=4.5V，ID=20A: 7.3~9mΩ
● Gate threshold voltage: 1.2-2.3V
● Leakage source leakage current
VDS=80V，VGS=0V，TJ=25℃：1uA
VDS=80V，VGS=0V，TJ=55℃：5uA
● Gate source leakage current: ±100nA
● Gate resistance: 1.5 Ω
● Total gate charge: 23.8nC
● Gate source charge: 6.5nC
● Gate drain charge: 10.7nC
● Turn-On Delay Time: 8.5ns
● Rise Time: 5ns
● Turn-Off Delay Time: 30ns
● Fall Time: 4.5ns
● Input Capacitance: 2377pF
● Output Capacitance: 409pF
● Reverse Transfer Capacitance: 5pF

FKBA0070产品规格书（部分）