供应FKBA0024A 东沅100V单N沟道MOS管

Fet/东沅 FKBA0024A PRPAK5x6 N通道100V快速开关MOSFET

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
● Drain- Source Breakdown Voltage: 100V
● Static Drain-Source On-Resistance : 8.5~10mΩ
● Gate Threshold Voltage: 2.5~4.5V
● Drain-Source Leakage Current
VDS=80V , VGS=0V , TJ=25℃: 1uA
VDS=80V , VGS=0V , TJ=55℃: 5uA
● Gate- Source Leakage Current: ±100nA
● Forward Transconductance: 50S

● Gate Resistance: 1.2Ω
● Total Gate Charge (10V): 84nC
● Gate Source Charge: 28nC
● Gate-Drain Charge: 26nC
● Turn-On Delay Time: 36ns
● Rise Time: 71ns
● Turn-Off Delay Time: 50ns
● Fall Time: 23ns
● Input Capacitance: 5580pF
● Output Capacitance: 571pF
● Reverse Transfer Capacitance: 278pF

FKBA0024A Diode Characteristics
● Continuous Source Current: 104A

● Pulsed Source Current: 200A
● Diode Forward Voltage: 1.2V
● Reverse Recovery Time: 24nS
● Reverse Recovery Charge: 28nC

FKBA0024A产品规格书（部分）