供应蓝箭现货 BRCS060N03YB N沟道MOS管

BlueRocket/蓝箭电子 BRCS060N03YB PDFN3×3A-8L塑封封装N沟道MOS场效应管

Descriptions

BRCS060N03YB N-Channel Enhancement Mode Field Effect Transistor in a PDFN 3×3A-8L Plastic Package.

Absolute Maximum Ratings(Ta=25℃)
● Drain-Source Voltage: 30V
● Drain Current: 40A
● Drain Current - Pulsed: 130A
● Gate-Source Voltage: ±20V
● Single Pulsed Avalanche Energy: 211mJ
● Avalanche Current: 23A
● Power Dissipation: 29W
● Operating and Storage Temperature Range: -55 to 150℃
● Junction-to-Ambient t≤10: 40℃/W
● Junction-to-Ambient Steady-State: 75℃/W
● Junction-to-Case Steady-State: 4.2℃/W

BRCS060N03YB产品规格书