供应Fet东沅 FKBA3056 场效应管MOSFET

Fet/东沅 FKBA3056 PRPAK5x6 N沟道30V快速开关MOSFET

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
● Drain- Source Breakdown Voltage: 30V
● Static Drain-Source On-Resistance
VGS=10V , ID=20A: 3.2~3.9mΩ
VGS=4.5V , ID=15A: 4.9~6.1mΩ
● Gate Threshold Voltage: 1.2~2.2V
● Drain-Source Leakage Current
VDS=30V , VGS=0V , TJ=25℃: 1uA
VDS=30V , VGS=0V , TJ=55℃: 5uA
● Gate- Source Leakage Current: ±100nA
● Forward Transconductance: 75S
● Gate Resistance: 0.7Ω 1.65Ω 2.6Ω
● Total Gate Charge: 14.7nC
● Gate Source Charge: 5.8nC
● Gate-Drain Charge: 3.5nC
● Turn-On Delay Time: 7.5ns
● Rise Time: 20.2ns
● Turn-Off Delay Time: 21.6ns
● Fall Time: 4.4ns
● Input Capacitance: 1476pF
● Output Capacitance: 556pF
● Reverse Transfer Capacitance: 70pF

FKBA3056 Diode Characteristics
● Continuous Source Current: 30A
● Diode Forward Voltage: 1V

FKBA3056产品规格书（部分）