供应BRCS150P04SC 蓝箭SOP-8 P沟道场效应管

BlueRocket/蓝箭电子 BRCS150P04SC SOP-8塑封封装P沟道场效应管

Descriptions

BRCS150P04SC P-Channel Enhancement Mode Field Effect Transistor in a SOP-8 Plastic Package.

Features

● VDS (V) = -40V

● ID = -10 A (VGS =±20V)

● RDS(ON) < 15mΩ (VGS = -10V)

● HF Product

Applications

Power Management in Notebook computer, Portable Equipment and Battery powered systems.

● Drain-Source Breakdown Voltage: -40V
● Zero Gate Voltage Drain Current
VDS=-12V VGS=0V: -1.0μA
VDS=-9.6V VGS=0V TJ=55°C: -5.0μA
● Gate-Body leakage current: ±100nA
● Gate Threshold Voltage:-1.2V -1.6V -2.5V
● Static Drain-Source On-Resistance
VGS=-10V ID=-10A: 13.1~15mΩ
VGS=-4.5V ID=-8A: 18~21mΩ
VGS=-2.5V ID=-5A: 9.5mΩ
● Diode Forward Voltage: -0.8~-1.0V
● Total Gate Charge (10V): 42~55nC
● Total Gate Charge  (4.5V) 18.6nC
● Gate Source Charge: 7nC
● Gate Drain Charge:  8.6nC
● Gate resistance: 8.5Ω
● Input Capacitance: 3300pF
● Output Capacitance: 135pF
● Reverse Transfer Capacitance: 177pF
● Turn-On DelayTime: 9.4ns
● Turn-On Rise Time: 20ns
● Turn-Off DelayTime: 55ns
● Turn-Off Fall Time: 30ns

BRCS150P04SC产品规格书