IRF1018EPBF MOSFET ▊进口原装现货▊

Symbol

Parameter

Max.

Units

I_D @ T_C = 25°C

Continuous Drain Current, V_GS @ 10V

79

A

I_D @ T_C = 100°C

Continuous Drain Current, V_GS @ 10V

56

IDM

Pulsed Drain Current CD

315

P_D @T_C = 25°C

Maximum Power Dissipation

110

W

Linear Derating Factor

0.76

W/°C

VGS

Gate-to-Source Voltage

± 20

V

dv/dt

Peak Diode Recovery CT

21

V/ns

T_J

TSTG

Operating Junction and

Storage Temperature Range

-55  to + 175

°C

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

Mounting torque, 6-32 or M3 screw ®

10lb·in (1.1N·m)

EAS (Thermally limited)

Single Pulse Avalanche Energy @

88

mJ

IAR

Avalanche Current CD

47

A

EAR

Repetitive Avalanche Energy ©

11

mJ