IRFS38N20D MOSFET ▊进口原装现货▊

Symbol

Parameter

Max.

Units

I_D @ T_C = 25°C

Continuous Drain Current, V_GS @ 10V ‡

43*

A

I_D @ T_C = 100°C

Continuous Drain Current, V_GS @ 10V ‡

30*

IDM

Pulsed Drain Current 

180

P_D @T_A = 25°C

Maximum Power Dissipation ‡

3.8

W

P_D @T_C = 25°C

Maximum Power Dissipation ‡

300*

W

Linear Derating Factor‡

2.0*

W/°C

VGS

Gate-to-Source Voltage

± 30

V

dv/dt

Peak Diode Recovery dv/dtƒ

9.5

V/ns

T_J

TSTG

Operating Junction and

Storage Temperature Range

-55 to + 175

°C

Soldering Temperature, for 10 seconds (1.6mm from case)

300

Mounting torque, 6-32 or M3 screw†

10 lbf•in (1.1N•m)