IRFR2905ZTRPBF MOSFET ▊进口原装现货▊

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, V_GS @ 10V (Silicon Limited)

59

A

ID @ TC = 100°C

Continuous Drain Current, V_GS @ 10V

42

ID @ TC = 25°C

Continuous Drain Current, V_GS @ 10V (Package Limited)

42

IDM

Pulsed Drain Current G)

240

PD @TC = 25°C

Power Dissipation

110

W

Linear Derating Factor

0.72

W/°C

VGS

Gate-to-Source Voltage

± 20

V

EAS (Thermally limited)

Single Pulse Avalanche Energy@

55

mJ

E_AS (Tested )

Single Pulse Avalanche Energy Tested Value ®

82

IAR

Avalanche Current G)

See Fig.12a, 12b, 15, 16

A

EAR

Repetitive Avalanche Energy Ci)  

mJ

TJ

TSTG

Operating Junction and

Storage Temperature Range

-55  to + 175

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Mounting Torque, 6-32 or M3 screw

10 lbf•in (1.1N•m)