2SA1832-GR,LF(B 双极晶体管

2SA1832-GR,LF(B

双极晶体管 - 双极结型晶体管(BJT) Transistor for Low Freq Sm-Signal Amp

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications

2SA1832-GR,LF(B

• High voltage and high current: VCEO = −50 V, IC = −150 mA (max)

• Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA)

= 0.95 (typ.)

• High hFE: hFE = 70 to 400

• Complementary to 2SC4738

• Small package

型号: 2SA1832-GR,LF(B 

制造商: Toshiba 

产品种类: 双极晶体管 - 双极结型晶体管(BJT) 

RoHS:  无铅环保  

技术: Si 

安装风格: SMD/SMT 

封装 / 箱体: SOT-426-3 

晶体管极性: PNP 

配置: Single 

集电极—发射极最大电压 VCEO: - 50 V 

集电极—基极电压 VCBO: - 50 V 

发射极 - 基极电压 VEBO: - 5 V 

集电极—射极饱和电压: - 100 mV 

最大直流电集电极电流: - 150 mA 

增益带宽产品fT: 80 MHz 

最大工作温度: + 125 C 

系列: 2SA1832 

直流电流增益 hFE 最大值: 400 at - 2 mA, - 6 V  

封装: Cut Tape  

封装: Reel  

商标: Toshiba  

直流集电极/Base Gain hfe Min: 70 at - 2 mA, - 6 V  

Pd-功率耗散: 100 mW  

产品类型: BJTs - Bipolar Transistors  

工厂包装数量: 3000  

子类别: Transistors  

单位重量: 2.400 mg

Absolute Maximum Ratings (Ta = 25°C)  2SA1832-GR,LF(B

Characteristics Symbol Rating Unit  Collector-base voltage VCBO −50 V  Collector-emitter voltage VCEO −50 V  Emitter-base voltage VEBO −5 V  Collector current IC −150 mA  Base current IB −30 mA  Collector power dissipation PC 100 mW  Junction temperature Tj 125 °C  Storage temperature range Tstg −55 to 125 °C