DESCRIPTION
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min)·HighDC Current Gain-: hFE=1000(Min)@ (VCE= -3V, IC= -1.5A)APPLICATIONS·Designed for low frequency power amplifier applications.ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -25mA; RBE=∞-120
VV(BR)CBOCollector-BaseBreakdownVoltageIC= -0.1mA; IE= 0-120
VV(BR)EBOEmitter-BaseBreakdownVoltageIE= -50mA; IC= 0-7
VVCE(sat)-1Collector-Emitter Saturation VoltageIC= -1.5A; IB= -3mA
-1.5VVCE(sat)-2Collector-Emitter Saturation VoltageIC= -3A; IB= -30mA
-3.0VVBE(sat)-1Base-Emitter Saturation VoltageIC= -1.5A; IB= -3mA
-2.0VVBE(sat)-2Base-Emitter Saturation VoltageIC= -3A; IB= -30mA
-3.5VICBOCollector Cutoff CurrentVCB= -100V; IE= 0
-10μAICEOCollector Cutoff CurrentVCE= -100V; RBE=∞
-10μAhFEDC Current GainIC= -1.5A; VCE= -3V1000 20000 VECFC-E Diode Forward VoltageIF= 3A
3.0V
