供应H5ANBG6NAMR-XNC原装 DDR4

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H5ANBG6NAMR-XNC原装 DDR4

32Gb DDR4 SDRAM (Dual Die Package) Lead-Free&Halogen-Free (RoHS Compliant)

 

H5ANBG6NAMR-XNC原装 DDR4  技术参数:

制造商

SK HYNIX

RoHS

容量

32GB

工作电压

1.2V

工作温度

0~85C

封装 / 箱体

FBGA 96BALL

架构

2Gb x 16

速率

3200Mbps

DRAM 类型

DDR4 SDRAM


全新原包原装可含税(香港可交):

MT29F4G08ABAEAWP:E

MT29F2G08ABAGAWP-IT:G

MT29F2G08ABAEAWP-IT:E

MT29F2G08ABAEAWP:E

MT29F2G08ABAEAH4:E

MT29F2G01ABAGDWB-IT:G

MT53D512M64D4HR-053 WT:D

K4UBE3D4AA-MGCL

K4UBE3D4AB-MGCL

K4U6E3S4AA-MGCR

 

H5ANBG6NAMR-XNC原装 DDR4的描述:

The H5ANBG6NAMR-xxC a 16Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 16Gb DDR4 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

型号

H5ANBG6NAMR-XNC

制造商

SK Hynix /海力士

封装

FBGA96

批次

21+/22+

无铅/环保

无铅/环保