H5ANBG6NAMR-XNC 全新原装

地区:广东 深圳
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深圳市迅丰达电子科技有限公司

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H5ANBG6NAMR-XNC 全新原装 DDR4 


H5ANBG6NAMR-XNC 的参数: 

制造商

SK HYNIX

RoHS

容量

32GB

工作电压

1.2V

工作温度

0~85C

封装 / 箱体

FBGA 96BALL

架构

2Gb x 16

速率

3200Mbps

DRAM 类型

DDR4 SDRAM

 

H5ANBG6NAMR-XNC 的描述:

The H5ANBG6NAMR-xxC a 16Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth.

SK hynix 16Gb DDR4 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

型号

H5ANBG6NAMR-XNC

制造商

SK Hynix /海力士

封装

FBGA

批次

23+

无铅/环保

无铅/环保