供应K4H561638J-LCB3 原装 DDR SDRAM

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K4H561638J-LCB3 原装  DDR SDRAM

 

K4H561638J-LCB3 原装  DDR SDRAM 的描述

The K4H560438J / K4H560838J / K4H561638J is 268,435,456 bits of double data rate synchronous DRAM organized as 4x 16,777,216/ 4x 8,388,608 / 4x 4,194,304 words by 4/8/16bits, fabricated with SAMSUNGs high performance CMOS technology.

 

Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin. I/O transactions are possible on both edges of DQS.

Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of

high performance memory system applications.

 

K4H561638J-LCB3 原装  DDR SDRAM 的技术参数:

制造商

SAMSUNG

型号

K4H561638J-LCB3 

描述

256Mb J-die DDR SDRAM

容量

256Mbit

架构

16Mx16

工作电压

2.5V

封装

TSOP-II

针脚数

66-Pin

RoHS

Lead-Free and Halogen-Free

 

100%原装现货▊  有需求联系我们

MT29F64G08CBABBWPR:B 10000 TSOP 22+ MICRON/美光

KLMBG2JETD-B041 10000 BGA 22+ SAMSUNG/三星

KLMAG1JETD-B041 10000 BGA 22+ SAMSUNG/三星

KLM8G1GETF-B041 10000 BGA 22+ SAMSUNG/三星

KLM4G1FETE-B041 10000 BGA 22+ SAMSUNG/三星

K4E8E324EB-EGCF 10000 BGA 22+ SAMSUNG/三星

K4E6E304EB-EGCF 10000 BGA 22+ SAMSUNG/三星

K4E6E304EC-EGCG 10000 BGA 22+ SAMSUNG/三星

K4B4G1646E-BCNB 10000 BGA 22+ SAMSUNG/三星

K4A8G165WB-BCRC 10000 BGA 22+ SAMSUNG/三星

THGBMNG5D1LBAIL 10000 BGA 22+ KOXIA/铠侠

THGBMJG7C1LBAIL 10000 BGA 22+ KOXIA/铠侠

THGBMJG6C1LBAIL 10000 BGA 22+ KOXIA/铠侠

THGBMHG6C1LBAIL 10000 BGA 22+ KOXIA/铠侠

TC58NVG1S3HTA00 10000 BGA 22+ KOXIA/铠侠

TC58NVG0S3HTA00 10000 BGA 22+ KOXIA/铠侠

TC58NVG0S3ETAI0 10000 BGA 22+ KOXIA/铠侠

TC58BVG1S3HTA00 10000 BGA 22+ KOXIA/铠侠

TC58BVG0S3HTA00 10000 BGA 22+ KOXIA/铠侠

NT5CC64M16GP-DII 10000 BGA 22+ NANYA/南亚

NT5CC64M16GP-DI 10000 BGA 22+ NANYA/南亚

NT5CC256M16ER-EKI 10000 BGA 22+ NANYA/南亚

NT5CC256M16ER-EK 10000 BGA 22+ NANYA/南亚

NT5CC256M16EP-EK 10000 BGA 22+ NANYA/南亚

NT5CC128M16JR-EK 10000 BGA 22+ NANYA/南亚

NT5AD512M16C4-HR 10000 BGA 22+ NANYA/南亚

NT5AD512M16A4-HR 10000 BGA 22+ NANYA/南亚

NT5AD256M16D4-HR 10000 BGA 22+ NANYA/南亚

H5AN8G6NCJR-VKC 10000 BGA 22+ SK HYNIX/海力士

H5AN4G6NBJR-VKC 10000 BGA 22+ SK HYNIX/海力士

H5AN4G6NBJR-UHC 10000 BGA 22+ SK HYNIX/海力士

H26M41208HPR 10000 BGA 22+ SK HYNIX/海力士

H26M41204HPR 10000 BGA 22+ SK HYNIX/海力士

MTFC8GAKAJCN-4MIT 10000 TSOP 22+ MICRON/镁光

MTFC4GACAJCN-4MIT 10000 TSOP 22+ MICRON/镁光

MTFC4GACAJCN-1MWT 10000 TSOP 22+ MICRON/镁光

MT53E256M32D2DS-053WT:B 10000 TSOP 22+ MICRON/镁光

MT53D512M64D4HR-053WT:D 10000 TSOP 22+ MICRON/镁光

MT53D512M32D2DS-053WT:D 10000 TSOP 22+ MICRON/镁光

MT52L512M32D2PF-107WT:B 10000 TSOP 22+ MICRON/镁光

MT52L256M32D1PF-107WT:B 10000 TSOP 22+ MICRON/镁光

MT41K64M16TW-107:J 10000 TSOP 22+ MICRON/镁光

MT41K64M16TW-107IT:J 10000 TSOP 22+ MICRON/镁光

MT41K512M8DA-107:P 10000 TSOP 22+ MICRON/镁光

MT41K256M16TW-107:P 10000 TSOP 22+ MICRON/镁光

MT41K256M16TW-107IT:P 10000 TSOP 22+ MICRON/镁光






型号

K4H561638J-LCB3

制造商

SAMSUNG/三星

封装

TSOP

批次

22+

无铅/环保

无铅/环保