MT47H64M16NF-25 E IT:M 原装DDR2

丝印代码：D9RZT

The DDR2 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. A single READ or WRITE operation for the DDR2 SDRAM effectively consists of a single 4n-bitwide, two-clock-cycle data transfer at the internal DRAM core and four corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O balls.

The DDR2 SDRAM is a high-speed CMOS, dynamic random access memory. It is internally configured as a multibank DRAM.

制造商	MICRON
存储器类型	易失
存储器格式	DRAM
技术	SDRAM - DDR2
存储容量	1Gb（64M x 16）
存储器接口	并联
时钟频率	400MHz
电压 - 供电	1.7V ~ 1.9V
工作温度	-40°C ~95°C（TC）
访问时间	400 ps
安装类型	表面贴装型
封装/外壳	FBGA-84
供应商器件封装	84-ball FBGA,8*12.5

MTFC8GAKAJCN-4MIT	MICRON/镁光
MTFC4GACAJCN-4MIT	MICRON/镁光
MTFC4GACAJCN-1MWT	MICRON/镁光
MT53E256M32D2DS-053WT:B	MICRON/镁光
MT53D512M64D4HR-053WT:D	MICRON/镁光
MT53D512M32D2DS-053WT:D	MICRON/镁光
MT52L512M32D2PF-107WT:B	MICRON/镁光
MT52L256M32D1PF-107WT:B	MICRON/镁光
MT41K64M16TW-107:J	MICRON/镁光
MT41K64M16TW-107IT:J	MICRON/镁光
MT41K512M8DA-107:P	MICRON/镁光
MT41K256M16TW-107:P	MICRON/镁光
MT41K256M16TW-107IT:P	MICRON/镁光
MT41K256M16TW-107AIT:P	MICRON/镁光
MT41K128M16JT-125:K	MICRON/镁光
MT41K128M16JT-125IT:K	MICRON/镁光
MT40A512M16LY-075:E	MICRON/镁光
MT29F64G08CBABBWPR:B	MICRON/镁光
MT29F4G08ABAEAWP:E	MICRON/镁光
MT29F2G08ABAGAWP-IT:G	MICRON/镁光
MT29F2G08ABAEAWP-IT:E	MICRON/镁光
MT29F2G08ABAEAWP:E	MICRON/镁光
MT29F2G08ABAEAH4:E	MICRON/镁光
MT29F2G01ABAGDWB-IT:G	MICRON/镁光
MT53D512M64D4HR-053 WT:D	MICRON/镁光

型号

MT47H64M16NF-25 E IT:M

制造商

MICRON/镁光

封装

FBGA

批次

22+

无铅/环保