供应NT5CC128M16JR-EKI 原装 LPDDR3

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NT5CC128M16JR-EKI 原装 LPDDR3


NT5CC128M16JR-EKI 原装 LPDDR3的技术参数:

产品类别

第三代低功耗双倍数据率同步动态随机存储器

存储格式

DRAM

存储技术

SDRAM-DDR3L

存储容量

2Gb (128M x 16)

存储接口

并联

电压-电源

1.283V ~ 1.45V

工作温度

-40°C ~ 95°C(TC)

安装类型

表面贴装

封装/外壳

FBGA96

时钟频率

933MHZ

数据速率

1866mbps

Interface And Power

SSTL_135 (1.35V,1.35V)

外包装

TRAY



NT5CC128M16JR-EKI 原装 LPDDR3的描述:

The 2Gb Double-Data-Rate-3 (DDR3(L)) is double data rate architecture to achieve high-speed operation. It is internally configured as an eight bank DRAMs. The 2Gb chip is organized as 32Mbit x 8 I/Os x 8 banks or 16Mbit x 16 I/Os x 8 bank devices.


 These synchronous devices achieve high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3(L) DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks.


Inputs are latched at the cross point of differential clocks (CK rising and CK falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion.

These devices operate with a single 1.5V ± 0.075V or 1.35V -0.067V/+0.1V power supply and are available in BGA packages.



型号

NT5CC128M16JR-EKI

制造商

NANYA/南亚

封装

FBGA

批次

21+/22+

无铅/环保

无铅/环保