供应K4B2G1646F-BYMA 原装 DDR3
地区：广东 深圳
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K4B2G1646F-BYMA 原装 DDR3
The 2Gb DDR3 SDRAM F-die is organized as a 16Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3-1866) for general applications.
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制造商 |
SAMSUNG |
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速度 |
1866 Mbps |
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电源电压 |
1.35 V |
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温度规格 |
0 ~ 85 °C |
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产品类型 |
DDR3 SDRAM |
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容量 |
2 GB |
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架构 |
128M x 16 |
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封装 |
FBGA-96 |
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KMGX6001BA-B514
KMGP6001BA-B514
KMFN60012M-B214
KMDX60018M-B425
KLMDG8JENB-B041
KLMCG4JETD-B041
KLMBG2JETD-B041
KLMAG1JETD-B041
KLM8G1GETF-B041
KLM4G1FETE-B041
K9F1G08U0E-SIB0
K4Z80325BC-HC14
K4G80325FC-HC25
K4E8E324ED-EGCG
K4E8E324EB-EGCF
K4E6E304EB-EGCF
K4E6E304ED-EGCG
K4E6E304EC-EGCG
K4E6E304EC-EGCF
K4B4G1646E-BYMA
K4B4G1646E-BYK0
K4B4G1646E-BCNB
K4E8E324EB-AGCF
K4B4G0846E-BYMA
K4AAG165WA-BCWE
K4AAG165WA-BCTD
K4A8G165WC-BCTD
K4A8G165WC-BCRC
K4A8G165WB-BCRC
K4A4G165WF-BCTD
K4A4G165WE-BCRC
KLMBG2JETD-B041
KLMAG1JETD-B041
KLM8G1GETF-B041
KLM4G1FETE-B041
K4E8E324EB-EGCF
K4E6E304EB-EGCF
K4E6E304EC-EGCG
K4B4G1646E-BCNB
K4A8G165WB-BCRC
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K4B2G1646F-BYMA
SAMSUNG/三星
FBGA
21+/22+
无铅/环保
