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K4A4G045WE-BCRC 原装 DDR4
4Gb E-die DDR4 SDRAMx16 only 96FBGA with Lead-Free & Halogen-Free(RoHS compliant) 1.2V
Easily processing massive workloads with enhanced speed,
the DDR4 transfers more data faster than ever before,
offering 4 bank groups (total 16 banks) to reduce interleaving
delays, plus 3,200 Mbps bandwidth and 1 TB/s system memory.
Samsung’s industry-first 1x nm process technology enables DDR4
to consume less power while boosting performance, reducing TCO.
The 1.2V low operating voltage and Pseudo Open Drain (POD)
interface enables lower power consumption, using 25% less energy.
System reliability is ever more critical as data centers process ever
more traffic. Advanced features of the Samsung DDR4 ensure
superior data transmission, including Write CRC to help recognize
multibit failures and parity checks for CMD/ADD to prevent system
malfunctions.
K4A4G045WE-BCRC 原装 DDR4 的技术参数:
类别 |
集成电路IC |
产品类型 |
DRAM ; DDR4 |
封装 |
FBGA-78 |
容量 |
4 GB |
电压 |
1.2V |
架构 |
1G *4 |
工作温度 |
0 ~ 85 °C |
速率 |
2400Mbps |
RoHs Status |
Lead free / RoHS Compliant |
外包装 |
TRAY |
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