供应NT5CC256M16DP-DI 原装 LPDDR3

地区:广东 深圳
认证:

深圳市迅丰达电子科技有限公司

金牌会员3年

全部产品 进入商铺

NT5CC256M16DP-DI 原装 LPDDR3

 

NT5CC256M16DP-DI 原装 LPDDR3的描述:

The 1Gb Double-Data-Rate-3 (DDR3/L) B-die DRAMs is double data rate architecture to achieve high-speed operation. It is internally configured as an eight bank DRAM. The 1Gb chip is organized as 16Mbit x 8 I/Os x 8 banks or 8Mbit x 16 I/Os x 8 bank devices. These synchronous devices achieve high speed double-data-rate transfer rates of up to 2133 Mb/sec/pin for general applications.


The 4Gb Double-Data-Rate-3 DDR3L DRAM is a high-speed CMOSSDRAM containing 4,294,967,296 bits. It is internally configured as an octal-bank DRAM. The 4Gb chip is organized as 64Mbit x 8I/O x 8 banksand 32Mbit x16I/O x 8 banks.


 These synchronous devices achieve high speed double-data-rate transfer rates of up to 2133Mb/sec/pin for general applications.The chip is designed to comply with all keyDDR3(L)DRAM key featuresand all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK falling).


All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V or1.35V -0.067V/+0.1Vpower supply and are available in BGA packages.


NT5CC256M16DP-DI 原装 LPDDR3的技术参数:

型号

NT5CC256M16DP-DI

制造商

NANYA

封装

BGA

针脚数

96 PIN

技术

LPDDR3

组织

256Mx16

DRAM类型

DRAM LPDDR3

中文名称

低功耗双倍数据率同步动态随机存储器

时钟频率

800MHz

容量

4Gbit

速度

1600Mbps



型号

NT5CC256M16DP-DI

制造商

NANYA/南亚

封装

FBGA

针脚数

96

无铅/环保

无铅/环保