供应K4B4G0846E-BCNB 原装DDR3

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K4B4G0846E-BCNB 原装DDR3

The DDR3 SDRAM is a high-speed CMOS, dynamic random-access memory internally configured as a eight-bank DRAM. The DDR3 SDRAM uses a 8n prefetch architecture to achieve high-speed operation. The 8n prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR3 SDRAM consists of a single 8n-bit wide, four clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half clock cycle data transfers at the I/O pins



K4B4G0846E-BCNB 原装DDR3的技术参数:

制造商

SAMSUNG

RoHS

产品类别

DRAM动态随机存储器

温度规格

0°C to +85°C

速度

1066MHZ

容量

4GB

电压

1.5 V

脚位/封装

FBGA-78

无铅/环保

无铅/环保

标准包装数量

1280

Number Of Words

512M

Bit Organization

x8

Density

4G


型号

K4B4G0846E-BCNB

制造商

SAMSUNG/三星

封装

FBGA-78

批次

22+

无铅/环保

无铅/环保