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K4B4G0846E-BCNB 原装DDR3
The DDR3 SDRAM is a high-speed CMOS, dynamic random-access memory internally configured as a eight-bank DRAM. The DDR3 SDRAM uses a 8n prefetch architecture to achieve high-speed operation. The 8n prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR3 SDRAM consists of a single 8n-bit wide, four clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half clock cycle data transfers at the I/O pins
K4B4G0846E-BCNB 原装DDR3的技术参数:
制造商 |
SAMSUNG |
RoHS |
是 |
产品类别 |
DRAM动态随机存储器 |
温度规格 |
0°C to +85°C |
速度 |
1066MHZ |
容量 |
4GB |
电压 |
1.5 V |
脚位/封装 |
FBGA-78 |
无铅/环保 |
无铅/环保 |
标准包装数量 |
1280 |
Number Of Words |
512M |
Bit Organization |
x8 |
Density |
4G |
K4B4G0846E-BCNB
SAMSUNG/三星
FBGA-78
22+
无铅/环保