全新原装H5TQ4G83EFR-RDC 512MX8 DDR3

全新原装H5TQ4G83EFR-RDC  512MX8 DDR3

H5TQ4G83EFR-RDC的技术参数：

脚位/封装 :  FBGA-78

外包装 :  TRAY

无铅/环保 :  无铅/环保

电压(伏) :  1.5 V

温度规格 :  0°C~+95°C

速度 :  1866 MHz

Number Of Words :  512M

Bit Organization :  x8

Density :  4G

Die Generation :  6th

Product Family :  DRAM

No Of Banks :  8 banks

Shipping Method :  tray

H5TQ4G83EFR-RDC 的描述

 The H5TQ4G83EFR-xxC,H5TQ4G63EFR-xxC are a 4,294,967,296-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK Hynix 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.