供应H5ANAG6NDMR-VKC 原装 DDR4

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H5ANAG6NDMR-VKC 原装 DDR4

16Gb DDR4 SDRAM  (Dual Die Package)  Lead-Free&Halogen-Free  (RoHS Compliant)

 

H5ANAG6NDMR-VKC 原装 DDR4 的技术参数:

制造商

SK HYNIX

RoHS

容量

16GB

工作电压

1.2V

工作温度

0°C~+85°C

架构

1GX16

无铅/环保

无铅/环保

外包装

TRAY

速率

2666 MT/s

max)时钟频率

1333 MHz

包装量

2000

DRAM 类型

SDRAM DDR4

封装 / 箱体

96ball FBGA DDP

 

全新原包原装可含税(香港可交):

MT29F4G08ABAEAWP:E

MT29F2G08ABAGAWP-IT:G

MT29F2G08ABAEAWP-IT:E

MT29F2G08ABAEAWP:E

MT29F2G08ABAEAH4:E

MT29F2G01ABAGDWB-IT:G

MT53D512M64D4HR-053 WT:D

K4UBE3D4AA-MGCL

K4UBE3D4AB-MGCL

K4U6E3S4AA-MGCR

 

H5ANAG6NDMR-VKC 原装 DDR4 的描述:

The H5ANAG6NDMR-xxC a 16Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix DDR4 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

型号

H5ANAG6NDMR-VKC

制造商

SK Hynix /海力士

封装

FBGA

批次

21+/22+

无铅/环保

无铅/环保