K4T1G084QJ-BCF7 原装全新DDR2

K4T1G084QJ-BCF7  原装全新DDR2

JEDEC standard VDD = 1.8V ± 0.1V Power Supply

VDDQ = 1.8V ± 0.1V

333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin,533MHz fCK for 1066Mb/sec/pin

8 Banks

Posted CAS

Programmable CAS Latency: 3, 4, 5, 6, 7

Programmable Additive Latenc y: 0, 1, 2, 3, 4, 5, 6

Write Latency(WL) = Read Latency(RL) -1

Burst Length: 4 , 8(Interleave/nibble sequential)

Programmable Sequential / Interleave Burst Mode

Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)

Off-Chip Driver(OCD) Impedance Adjustment

On Die Termination

Special Function Support

- 50ohm ODT

- High Temperature Self-Refresh rate enable

Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C

Support Industrial Temp (-40~90°C)

 -tREFI 7.8us at -40°C < TCASE < 85°C

 -tREFI 3.9us at 85°C < TCASE < 95°C

All of products are Lead-Free, Halogen-Free, and RoHS compliant

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K4F6E3S4HM-MGCJ 10K 23+

K4AAG165WA-BCWE 10K 23+

K4B4G0846E-BCNB 10K 23+

K4UBE3D4AA-MGCL 10K 23+

K4UBE3D4AB-MGCL 10K 23+

K4U6E3S4AA-MGCR 10K 23+

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