代理新洁能品牌MOS管NCE40H12K

深圳黄金树科技有限公司代理国内MOSFET，IC 集成电路，桥堆 二三极管 可控硅等电子产品， 产品主要应用于UPS、EPS、逆变电源、工业控制板、变频电源、开关电源、电力操作电源、小家电，新能源，汽车电子等高科技行业，并致力于推广供应环保无铅的绿色产品。 我们本着“诚信经营，互惠互赢”的理念贯穿供应，销售，服务的始终。我们始终将“创新，进取，诚信合作，品质第一，客户第一，服务至上”作为商务合作发展的基石，愿我们持续，共同发展！深圳黄金树科技有限公司是国内外的电子元器件混合分销商，成立于深圳龙华区，主要产品有SPM、IGBT、MOSFET、FRD(快恢复）、可控硅、光耦、IC、MCU等。代理品牌有：无锡新洁能（NCE)，江苏捷捷微（JJM),福斯特（FIRST),台湾博盛（POTENS)，优势现货品牌有UTC友顺，安森美(ON)，英飞凌(Infineon) ,NXP,ADI,RICHTEK,TI等。

新洁能NCE40H12K 原装正品，欢迎来电咨询合作

NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =40V,ID =120A RDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Load switching ● Hard switched and high frequency circuits ● Uninterruptible power supply 100% UIS TESTED! 100% ∆Vds TESTED! Schematic diagram Marking and pin assignment TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE40H12K NCE40H12K TO-252-2L - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 120 A Drain Current-Continuous(TC=100℃) ID (100℃) 85 A Pulsed Drain Current IDM 330 A Maximum Power Dissipation PD 120 W Derating factor 0.8 W/℃ Single pulse avalanche energy (Note 5) EAS 1080 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃