华瑞微HRM65R380F TO-220F MOSFET

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Description
650V Super-junction MOSFET Gen
Super-junction MOSFET Genis designed by HR-Micro
Semiconductor Company,according to the SJ principle.This
device provide an excellent Gate charge and Rds(on),which
leads to extremely communication and conduction losses .So it
is very suitable for AC/DC power conversion, Laptop adapter,
Lighting, and industrial power applications.
Features
l Very low FOM RDS(on)×Qg
l 100% avalanche tested
l Easy to use/drive
l RoHS compliant
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply (UPS)
l Power Factor Correction (PFC)
l Charger
Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
700
V
RDS(on),max
0.38
Ω
Qg,typ
23.1
nC
ID
11
A
ID,pulse
33
A
EOSS @ 400V
2.29
μJ
Body Diode diF/dt
500
A/μs
Device Marking and Package Information
Device
Package
Marking
HRM65R380B
TO-263
65R380B
HRM65R380L
TO-262
65R380L
HRM65R380P
TO-220
65R380P
HRM65R380U
TO-251
65R380U
650V Super-junction Power MOSFET Gen
Drain
Source
Gate
2
TO-263
TO-262
TO-220
TO-251
G S
D
G D S
G D S
G D SHRM65R380x
南京华瑞微集成电路有限公司
NanJing HRM Semiconductor Co.,Ltd
Rev.2019 V1.0
HR-micro © Copyright reserved 2019
Absolute Maximum Ratings TC = 25oC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source voltage(VGS=0V)
VDS
650
V
Continuous Drain Current1)
TC = 25oC
ID
11
A
TC = 100oC
6.6
Pulsed Drain Current2)
ID,pulse
33
A
Gate-Source Voltage
VGS
±30V
V
Single Pulse Avalanche Energy
EAS
215
mJ

型号/规格

HRM65R380F

品牌/商标

华瑞微

封装形式

TO-220F

环保类别

无铅环保型

安装方式

直插式

包装方式

单件包装

VDS

650V

ID

11A

VGS

±30V

EAS

215mJ