代理新能洁品牌MOSFET NCE60H15A

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NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =150A RDS(ON) <4.5mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply 100% UIS TESTED! 100% ∆Vds TESTED! Schematic diagram Marking and pin assignment TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE60H15 NCE60H15 TO-220-3L - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 150 A Drain Current-Continuous(TC=100℃) ID (100℃) 105 A Pulsed Drain Current IDM 600 A Maximum Power Dissipation PD 220 W Derating factor 1.47 W/℃ Single pulse avalanche energy (Note 5) EAS 1400 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃