【IR*原装 MOS管 场效应管】 IRFBG30 IRFBG30PBF*

【IR*原装 MOS管 场效应管】 IRFBG30  IRFBG30PBF

【IR*原装 MOS管 场效应管】 IRFBG30  IRFBG30PBF 

IRFBG30  IRFBG30PBF 产品规格  参数

Datasheets IRFBG30
Packaging Information
Product Photos TO-220AB
Standard Package 1,000
Category Discrete Semiconductor Products
Family FETs - Single
Series -
FET T*e MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 1000V (1kV)
Current - Continuous Drain (Id) @ 25° C 3.1A
Rds On (Max) @ Id, Vgs 5 Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 80nC @ 10V
Input Capacitance (Ciss) @ Vds 980pF @ 25V
Power - Max 125W
Mounting T*e Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Packaging Tube
Other Names *IRFBG30