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【IR*原装 MOS管 场效应管】 IRF9640 IRF9640PBF
【IR*原装 MOS管 场效应管】 IRF9640 IRF9640PBF
IRF9640 IRF9640PBF产品规格 参数
Datasheets IRF9640
Packaging Information
Product Photos TO-220AB
Catalog Drawings IR(F,L)x Series Side 1
IR(F,L)x Series Side 2
Standard Package 1,000
Category Discrete Semiconductor Products
Family FETs - Single
Series -
FET T*e MOSFET P-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25° C 11A
Rds On (Max) @ Id, Vgs 500 mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 44nC @ 10V
Input Capacitance (Ciss) @ Vds 1200pF @ 25V
Power - Max 125W
Mounting T*e Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Packaging Tube
Catalog Page 1307 (US2011 Interactive)
1307 (US2011 PDF)
Other Names *IRF9640PBF
VISHAY=IR
IRF9640 IRF9640PBF
结型(JFET)
N沟道
耗尽型
MW/微波
CER-DIP/陶瓷直插
SIT静电感应
22(V)
22(V)
22(μS)
22(pF)
22(dB)
2(mA)
2(mW)