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INFINEON*场效应管/散新管SPP04N60C3
INFINEON*场效应管/散新管SPP04N60C3
SPP04N60C3产品规格 参数 PDF
Datasheets SPP,SPA04N60C3
Product Photos TO-220-3
Product Training Modules CoolMOS™ CP Switching Behavior
CoolMOS™ CP High Voltage MOSFETs Converters
Catalog Drawings MOSFET TO-220(AB), TO-220-3
Standard Package 500
Category Discrete Semiconductor Products
Family FETs - Single
Series CoolMOS™
FET T*e MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25° C 4.5A
Rds On (Max) @ Id, Vgs 950 mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id 3.9V @ 200µA
Gate Charge (Qg) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) @ Vds 490pF @ 25V
Power - Max 50W
Mounting T*e Through Hole
Package / Case TO-220-3
Supplier Device Package PG-TO220-3
Packaging Tube
Catalog Page 1394 (US2011 Interactive)
1394 (US2011 PDF)
Other Names SP
SP
SP
SPP04N60C3IN
SPP04N60C3X
SPP04N60C3XK
SPP04N60C3XTIN
SPP04N60C3XTIN-ND
INFINEON/英飞凌
SPP04N60C3
结型(JFET)
N沟道
耗尽型
MOS-HBM/半桥组件
CER-DIP/陶瓷直插
ALGaAS铝镓砷
22(V)
22(V)
22(μS)
22(pF)
22(dB)
22(mA)
22(mW)