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AO8801A
20V P-Channel MOSFET
General Description
The AO8801A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
Product Summary
*D Protected
Top View
TSSOP8 Bottom View Top View D1 S1 S1 G1 Pin 8 7 6 5 D2 S2 S2 G2
ID IDM
PD TJ, TSTG
Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol
t 10s Steady-State Steady-State
RJA RJL
T*
Max
Rev 0: May 2009
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AO8801A
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
THIS PRODU* HAS BEEN D*IGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR US* AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVIC* OR SYSTEMS ARE *T AUTHORIZED. AOS DO* *T ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR US* OF ITS PRODU*S. AOS R*ERV* THE RIGHT TO IMPROVE PRODU* D*IGN, FUN*IONS AND RELIABILITY WITHOUT *TICE.
Rev 0: May 2009
www.ao*d.com
AO8801A
TYPICAL ELE*RICAL AND THERMAL CHARA*ERISTICS
30 -ID (A)
20 -2V 10
1.0E+01 1.0E+00
RDS(ON) (m) 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0
-VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
Rev 0: May 2009
www.ao*d.com
AO8801A
TYPICAL ELE*RICAL AND THERMAL CHARA*ERISTICS
4 -VGS (Volts)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
0.1 Single Pulse 0.01 0.00001
PD Ton T00
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: May 2009
www.ao*d.com
AO8801A
Gate Charge Test Circuit W aveform
Vgs Qg -10V
DUT Vgs Ig
R esistive S w itching T est C ircuit W avefo rm s
D io de R ec overy T est C ircuit W aveform s
Rev 0: May 2009
Charge
t on td(on) tr t d(o ff) t off tf
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AOS/美国万代
AO8801A
结型(JFET)
P沟道
增强型
A/宽频带放大
SMD(SO)/表面封装
P-FET硅P沟道
50(V)
10(V)
12(μS)
1(pF)
20(dB)
10(mA)
2(mW)