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ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60
V
Gate-Source Voltage VGS &plu*n; 20
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
ID
90d
A
TC = 70 °C 90d
Pulsed Drain Current IDM 240
Avalanche Current IAS 70
Single Avalanche Energya L = 0.1 mH EAS 245 mJ
Maximum Power Dissipationa
TC = 25 °C
PD
300b
W
TA = 25 °Cc 3.75
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C
THERMAL R*ISTANCE RATINGS
Parameter Symbol Limit Unit
Junction-to-Ambient (PCB Mount)c RthJA 40
°C/W
Junction-to-Case (Drain) RthJC 0.5
RoHS
COMPLIANT
Vishay/威世通
SUM90N06-4M4P-E3
结型(JFET)
N沟道
增强型
S/开关
SMD(SO)/表面封装
N-FET硅N沟道
1(V)
1(V)
1(μS)
1(pF)
1(dB)
1(mA)
1(mW)