现货供应万代系列场效应管 MOS管 AOD436

AOD436
N-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = 30V
ID = 60A (VGS = 10V)
RDS(ON) < 7.5mΩ (VGS = 10V)
RDS(ON) < 13mΩ (VGS = 4.5V)
General Description
The AOD436 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
Standard Product AOD436 is Pb-free (meets ROHS
& Sony 259 specifications). AOD436L is a Green
Product ordering option. AOD436 and AOD436L are
electrically identical.


*51 223 MOS管