现货供应AOS万代系列场效应管 MOS管AOD438

AOD438
N-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = 30V
ID = 85A (VGS = 10V)
RDS(ON) < 3.5mΩ (VGS = 10V)
RDS(ON) < 5.5mΩ (VGS = 4.5V)
General Description
The AOD438 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. This device is ideally suited for use
as a low side switch in CPU core power conversion.
Standard Product AOD438 is Pb-free (meets ROHS
& Sony 259 specifications). AOD438L is a Green
Product ordering option. AOD438 and AOD438L are
electrically identical.
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*51 223 MOS管