现货供应AOS万代系列场效应管 MOS管AOU413

AOU413
P-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = -40V
ID = -12A (VGS = -10V)
RDS(ON) < 45mΩ (VGS = -10V)
RDS(ON) < 69mΩ (VGS = -4.5V)
General Description
The AOU413 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications. Standard Product
AOU413 is Pb-free (meets ROHS & Sony 259
specifications). AOU413L is a Green Product
ordering option. AOU413 and AOU413L are
electrically identical.



*51 223 MOS管