现货供应AOS万代系列场效应管 MOS管AOU402

AOU402
N-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = 60V
ID = 12 A (VGS = 10V)
RDS(ON) < 60 mΩ (VGS = 10V)
RDS(ON) < 85 mΩ (VGS = 4.5V)
General Description
The AOU402 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOU402 is Pb-free (meets ROHS & Sony
259 specifications). AOU402L is a Green Product
ordering option. AOU402 and AOU402L are

TO-251

*51 223 MOS管