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专AOD452
N-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) =25V
ID = 55 A (VGS = 10V)
RDS(ON) < 8.5 mΩ (VGS = 10V)
RDS(ON) < 14 mΩ (VGS = 4.5V)
General Description
The AOD452 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
Standard product AOD452 is Pb-free (meets ROHS &
Sony 259 specifications). AOD452L is a Green
Product ordering option. AOD452 and AOD452L are
electrically identical.
G
业51 223 MOS管
Alpha/阿尔法
AOD452
结型(JFET)
N沟道
增强型
SMD(SO)/表面封装
GE-N-FET锗N沟道
1(V)
1(V)
1(pF)
1(dB)
1(mA)
1(mW)