现货供应AOS万代系列场效应管 MOS管AOD452

专AOD452
N-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) =25V
ID = 55 A (VGS = 10V)
RDS(ON) < 8.5 mΩ (VGS = 10V)
RDS(ON) < 14 mΩ (VGS = 4.5V)
General Description
The AOD452 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
Standard product AOD452 is Pb-free (meets ROHS &
Sony 259 specifications). AOD452L is a Green
Product ordering option. AOD452 and AOD452L are
electrically identical.
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业51 223 MOS管