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品牌/商标 | ON/KEC/长电 | 型号/规格 | MPSA06 |
应用范围 | 放大 | 功率特性 | *率 |
频率特性 | 中频 | *性 | NPN型 |
结构 | 点接触型 | 材料 | 硅(Si) |
封装形式 | TO-92 | 封装材料 | 树脂封装 |
截止频率fT | 50(MHz) | 集电**大允许电流ICM | 500m(A) |
集电**大耗散功率PCM | 600m(W) | 营销方式 | 现货 |
产品性质 | * |
*现货供应 三*管MPSA06
D IM MIN MAX
A 4.32 5 .33
B 4.45 5 .2
C 3.18 4 .19
D 0.41 0 .50
E 0.35 0 .50
F 5 5
G 1.14 1 .40
H 1.14 1 .53
K 12.70 -
Code Style Pin 1 Pin 2 Pin 3
TO - 92 Collector Base Emitter
Items Symbol Ratings Unit
Collector - Base VCBO 80 V
Collector - Emitter VCEO 80 V
Emitter - Base VEBO 4 V
Power Dissipation PD 625 mW
Collector Current IC 500 mA
Junction to Case Rth (JC) 83.3 °C/W
Junction to Ambient Rth (JA) (1) 200 ° C/W
Current gain Bandwidth Product fT
IC = 10mA VCE = 2V
f = 100 MHz
100 MHz
Description Symbol Test Conditions Min T* Max Units
Collector - Emitter Breakdown Voltage VCEO IC = 1mA, IB = 0 80 V
Emitter - Base Voltage VEBO IE = 100uA, IC = 0 4 V
Collector - Cut off Current
ICEO
ICBO
VCE = 60V, IB = 0
VCB = 80V, IE = 0
0.1
0.1
μA
μA
DC Current Gain hFE
IC = 10mA, VCE = 1V
IC = 100mA, VCE = 1V
100
100
Collector Emitter (sat) Voltage VCE (sat) IC = 100mA, IB = 10mA 0.25 V
Base Emitter (on) Voltage VBE (on) IC = 100mA, VCE = 1V 1.2 V